If your location is not listed, please select one of the following:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

If your location is not listed, please select one of the following:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Home
  2. Products
  3. DRAM
  4. DDR3
  5. K4B2G1646F-BYNB

Samsung Semiconductor - K4B2G1646F-BYNB

KEY Part #: K7359666

[19090pcs Stock]

    Part Number:
    K4B2G1646F-BYNB
    Manufacturer:
    Samsung Semiconductor
    Detailed description:
    2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : MODULE, HBM Aquabolt, DDR3, LPDDR4, DDR4, LPDDR5, HBM Flarebolt and SLC Nand ...
    Competitive Advantage:
    We specialize in Samsung Semiconductor K4B2G1646F-BYNB electronic components. K4B2G1646F-BYNB can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BYNB Product Attributes

    Part Number : K4B2G1646F-BYNB
    Manufacturer : Samsung Semiconductor
    Description : 2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Series : DDR3

    Latest News

    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Evolving Mobile Solutions: Samsung at MWC 2018
    Speed for the next generation of mobile devices
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    5G and Memory - from Connected Thinking to Connected Living
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    You May Also Be Interested In
    • K3UH5H50AM-AGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH5H50AM-EGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

      Samsung Semiconductor

      64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    Hot Parts